Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-02
2008-12-02
Potter, Roy K (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S672000, C438S675000
Reexamination Certificate
active
07459393
ABSTRACT:
A method for fabricating a semiconductor component includes the steps of providing a substrate having a contact on a circuit side thereof, forming an opening from a backside of the substrate to the contact, forming a conductive via in the opening in electrical contact with a surface of the contact, and forming a second contact on the back side in electrical communication with the conductive via. The method can also include the steps of thinning the substrate from the backside, forming insulating layers on the circuit side and the backside, and forming a conductor and terminal contact on the circuit side in electrical communication with the conductive via. A semiconductor component includes the contact on the circuit side, the conductive via in electrical contact with the contact, and the second contact on the backside in electrical communication with the conductive via. The semiconductor component can also include the insulating layers, the conductor and the terminal contact.
REFERENCES:
patent: 3761782 (1973-09-01), Youmans
patent: 4348253 (1982-09-01), Subbarao et al.
patent: 4808273 (1989-02-01), Hua et al.
patent: 4899921 (1990-02-01), Bendat et al.
patent: 5138434 (1992-08-01), Wood et al.
patent: 5229647 (1993-07-01), Gnadinger
patent: 5299092 (1994-03-01), Yaguchi et al.
patent: 5399898 (1995-03-01), Rostoker
patent: 5437915 (1995-08-01), Nishimura et al.
patent: 5468681 (1995-11-01), Pasch
patent: 5495667 (1996-03-01), Farnworth et al.
patent: 5543658 (1996-08-01), Hosokawa et al.
patent: 5686317 (1997-11-01), Akram et al.
patent: 5686352 (1997-11-01), Higgins, III
patent: 5851911 (1998-12-01), Farnworth
patent: 5888883 (1999-03-01), Sasaki et al.
patent: 5897337 (1999-04-01), Kata et al.
patent: 5950070 (1999-09-01), Razon et al.
patent: 6060373 (2000-05-01), Saitoh
patent: 6080602 (2000-06-01), Tani et al.
patent: 6087845 (2000-07-01), Wood et al.
patent: 6097087 (2000-08-01), Farnworth et al.
patent: 6107109 (2000-08-01), Akram et al.
patent: 6114240 (2000-09-01), Akram et al.
patent: 6118179 (2000-09-01), Farnworth et al.
patent: 6130111 (2000-10-01), Ikuina et al.
patent: 6153448 (2000-11-01), Takahashi et al.
patent: 6169329 (2001-01-01), Farnworth
patent: 6177295 (2001-01-01), De Samber et al.
patent: 6221751 (2001-04-01), Chen et al.
patent: 6233185 (2001-05-01), Beffa et al.
patent: 6235554 (2001-05-01), Akram et al.
patent: 6251703 (2001-06-01), Van Campenhout et al.
patent: 6252299 (2001-06-01), Masuda et al.
patent: 6271056 (2001-08-01), Farnworth et al.
patent: 6281131 (2001-08-01), Gilton et al.
patent: 6294837 (2001-09-01), Akram et al.
patent: 6303981 (2001-10-01), Moden
patent: 6303997 (2001-10-01), Lee
patent: 6310390 (2001-10-01), Moden
patent: 6313531 (2001-11-01), Geusic et al.
patent: 6314013 (2001-11-01), Ahn
patent: 6326242 (2001-12-01), Brooks
patent: 6326689 (2001-12-01), Thomas
patent: 6326698 (2001-12-01), Akram
patent: 6330158 (2001-12-01), Akram
patent: 6338980 (2002-01-01), Satoh
patent: 6340845 (2002-01-01), Oda
patent: 6359456 (2002-03-01), Hembree et al.
patent: 6362529 (2002-03-01), Sumikawa et al.
patent: 6368896 (2002-04-01), Farnworth et al.
patent: 6368930 (2002-04-01), Enquist
patent: 6372624 (2002-04-01), Farnworth et al.
patent: 6384487 (2002-05-01), Smith
patent: 6400172 (2002-06-01), Akram et al.
patent: 6432752 (2002-08-01), Farnworth
patent: 6440772 (2002-08-01), Smith
patent: 6441483 (2002-08-01), Akram
patent: 6451624 (2002-09-01), Farnworth et al.
patent: 6465877 (2002-10-01), Farnworth et al.
patent: 6472735 (2002-10-01), Isaak
patent: 6482576 (2002-11-01), Farnworth et al.
patent: 6482674 (2002-11-01), Kinsman
patent: 6501165 (2002-12-01), Farnworth et al.
patent: 6506625 (2003-01-01), Moden
patent: 6507114 (2003-01-01), Hui et al.
patent: 6524346 (2003-02-01), Farnworth
patent: 6544902 (2003-04-01), Farnworth
patent: 6549821 (2003-04-01), Farnworth et al.
patent: 6569762 (2003-05-01), Kong
patent: 6577013 (2003-06-01), Glenn et al.
patent: 6582992 (2003-06-01), Poo et al.
patent: 6614104 (2003-09-01), Farnworth et al.
patent: 6812549 (2004-11-01), Umetsu et al.
patent: 6841883 (2005-01-01), Farnworth et al.
patent: 6903442 (2005-06-01), Wood et al.
patent: 6903443 (2005-06-01), Farnworth et al.
patent: 6906418 (2005-06-01), Hiatt et al.
patent: 6908784 (2005-06-01), Farnworth et al.
patent: 6936913 (2005-08-01), Akerling et al.
patent: 6964915 (2005-11-01), Farnworth et al.
patent: 6998717 (2006-02-01), Farnworth et al.
patent: 7060526 (2006-06-01), Farnworth et al.
patent: 7078266 (2006-07-01), Wood et al.
patent: 7081665 (2006-07-01), Wood et al.
patent: 7224051 (2007-05-01), Farnworth et al.
patent: 2002/0017710 (2002-02-01), Kurashima et al.
patent: 2004/0235270 (2004-11-01), Noma et al.
patent: 4-320362 (1992-11-01), None
patent: 4-320365 (1992-11-01), None
patent: 5-67726 (1993-03-01), None
patent: 405082720 (1993-04-01), None
patent: 10-79362 (1998-03-01), None
patent: 2000-31185 (2000-01-01), None
Dexter Electronic Material, Hysol® 4450 Material Properties, spec sheet, pp. 1-2, Aug. 20, 1999.
Dexter Electronic Material, Hysol® 4451 Material Properties, spec sheet, pp. 1-2, Aug. 20, 1999.
Wafer Size CSP Packaging by VPES, Japan Rec Co., Ltd, advertising material, pp. 1-4, 1998.
Parylene Coating, advertising for Speciality Coating Systems, pp. 1-3, date unknown.
Advanced Coating Parylene Conformal Coating Specialists, advertising material, pp. 1-7, 1998.
David Francis & Linda Jardine, “Thin, Wafer-Level Package is Made Without Damaging Die”, Chip Scale Review, May/Jun. 2002, p. 70.
Jeffrey C. Demmin, “More Thinning at ICAPS”, Advanced Packaging, Mar. 13, 2002.
Benson Pete A.
Farnworth Warren M.
Hembree David R.
Hiatt William M.
Kirby Kyle K.
Gratton Stephen A.
Micro)n Technology, Inc.
Potter Roy K
LandOfFree
Method for fabricating semiconductor components with thinned... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating semiconductor components with thinned..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor components with thinned... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4041891