Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-02-12
2000-09-05
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438666, 438672, H01L 2144
Patent
active
061142409
ABSTRACT:
A method for fabricating semiconductor components, such as packages, interconnects and test carriers, is provided. The method includes laser machining conductive vias for interconnecting contacts on the component, using a laser beam that is focused to produce a desired via geometry. The vias can include enlarged end portions to facilitate deposition of a conductive material during formation of the vias, and to provide an increased surface area for forming the contacts. For example, by focusing the laser beam at a midpoint of a substrate of the component, an hour glass via geometry is provided. Alternately, the laser beam can be focused at an exit point, or at an entry point of the substrate, to provide converging or diverging via geometries. The method can also include forming contact pins on the conductive vias by bonding and shaping metal wires using a wire bonding process, or a welding process.
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Akram Salman
Farnworth Warren M.
Wood Alan G.
Berezny Nema
Bowers Charles
Graton Stephen A.
Micro)n Technology, Inc.
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