Method for fabricating semi-conductor devices

Details Method for fabricating semi-conductor devices Method for fabricating semi-conductor devices

1979-07-05

1981-01-20

Ozaki, G.

Metal treatment

Compositions

Heat treating

148187, 29571, H01L 2126

Patent

active

042460441

ABSTRACT:
A process for fabricating semi-conductor devices, such as depletion mode MOS transistors, including the process of doping impurities in to the semi-conductor substrate by using a newly provided oxide layer as a doping mask, and thereafter providing a gate oxide layer. A desired gate threshold voltage is thereby reliably obtained.

REFERENCES:
patent: 3966501 (1976-06-01), Nomura et al.
patent: 4033026 (1977-07-01), Pashley
patent: 4039358 (1976-09-01), Kitajima et al.

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