Method for fabricating self-aligned silicide

Details Method for fabricating self-aligned silicide Method for fabricating self-aligned silicide

1999-02-24

2000-11-28

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438682, H01L 2144

Patent

active

061535206

ABSTRACT:
A method to fabricate a salicide layer is described. The method is performed by forming a metal layer on the polysilicon gate and source/drain region and by a chemical vapor deposition using TiCl.sub.4 as a source gas. The metal layer is in situ transformed into a silicide layer in the formation step of the metal layer.

REFERENCES:
patent: 5856237 (1999-01-01), Ku
patent: 5994747 (1999-11-01), Wu
patent: 6015753 (2000-01-01), Lin et al.
patent: 6022805 (2000-02-01), Sumi

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