Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-07-05
2005-07-05
Smith, Brad (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S738000, C438S739000, C438S595000
Reexamination Certificate
active
06913987
ABSTRACT:
Word lines of a semiconductor component are provided with an encapsulation of dielectric material, Spacers of oxide extend alongside at the sidewalls of the word lines. The spacers are subsequently covered together with the word lines with a nitride layer. Borophosporosilicate glass is introduced between those portions of the nitride layer which respectively belong to a word line and is removed selectively with respect to the nitride using a mask. Contact hole fillings for the electrical connection of the buried bit lines are introduced into the contact holes thus formed.
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Haufe Juerg
Willer Josef
Greenberg Laurence A.
Infineon - Technologies AG
Infineon Technologies Flash GmbH & Co. KG
Locher Ralph E.
Smith Brad
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