Method for fabricating Schottky barrier tunnel transistor

Details Method for fabricating Schottky barrier tunnel transistor Method for fabricating Schottky barrier tunnel transistor

2011-01-04

2011-01-04

Purvis, Sue (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C257SE29148

Reexamination Certificate

active

07863121

ABSTRACT:
A Schottky barrier tunnel transistor includes a gate electrode, and source and drain regions. The gate electrode is formed over a channel region of a substrate to form a Schottky junction with the substrate. The source and drain regions are formed in the substrate exposed on both sides of the gate electrode.

REFERENCES:
patent: 4855246 (1989-08-01), Codella et al.
patent: 5512499 (1996-04-01), Cambou et al.
patent: 6271133 (2001-08-01), Lim et al.
patent: 6339005 (2002-01-01), Bryant et al.
patent: 6974737 (2005-12-01), Snyder et al.
patent: 7183573 (2007-02-01), Bryant et al.
patent: 2001/0024847 (2001-09-01), Snyder
patent: 2003/0139002 (2003-07-01), Snyder
patent: 2005/0133866 (2005-06-01), Chau et al.
patent: 2005/0151166 (2005-07-01), Lin et al.
patent: 1020000025576 (2000-05-01), None
patent: 10-2004-0015417 (2004-02-01), None
patent: 10-0560432 (2006-03-01), None
L.E. Calvet et al., “Supression of leakage current in Schottky barrier metal-oxide-semiconductor field-effect transistors”, Journal of Applied Physics, vol. 91, No. 2, Jan. 15, 2002, 2002 American Institute of Physics (pp. 757-759).

Affiliated with

Also associated with

Rating

Method for fabricating Schottky barrier tunnel transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating Schottky barrier tunnel transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating Schottky barrier tunnel transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2661807