Method for fabricating saddle type fin transistor

Details Method for fabricating saddle type fin transistor Method for fabricating saddle type fin transistor

2009-10-06

2010-12-07

Fulk, Steven J (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C257SE21232

Reexamination Certificate

active

07846844

ABSTRACT:
A method for fabricating a saddle type fin transistor includes: preparing a substrate where a device isolation structure is already formed; forming a hard mask pattern over the substrate, the hard mask pattern including a coating layer obtained through a coating method; and performing an etching process using the hard mask pattern as an etch mask to form a saddle type fin. The hard mask pattern may be formed in a stack structure including an amorphous carbon layer and the coating layer.

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