Method for fabricating recrystallized semiconductor film

Details Method for fabricating recrystallized semiconductor film Method for fabricating recrystallized semiconductor film

1991-12-05

1993-07-20

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156603, 156610, 437 84, C30B 1322

Patent

active

052289486

ABSTRACT:
A method for fabricating a recrystallized semiconductor film includes forming a polycrystalline or amorphous semiconductor film on a base having a melting point or softening temperature lower than the melting point of the semiconductor film, heating the base to melt it with a first heater, and melting the semiconductor film with a second heater and recrystallizing the semiconductor film while the base is molten. Thereby, generation of stress in the semiconductor film is prevented or reduced and the planarity of the semiconductor film is not damaged by distortion of the substrate and the temperature in the semiconductor film is uniform at the time of recrystallization. As a result, a recrystallized film with good crystallinity is obtained.

REFERENCES:
patent: 4321099 (1982-03-01), Stirn et al.
patent: 4784723 (1988-11-01), Sakurai
patent: 4822752 (1989-04-01), Sugahara et al.
Fukami et al., "Improvement In Crystalline Quality of Silicon On Fused Silica By Zone Melting Recrystallization", Electron Community Socciety Thesis, 86/9 vol. J69-C, pp. 1089-1095.
Fan et al., "Graphite-Strip-Heater Zone-Melting Recrystallization of Si Films", Journal of Crystal Growth 63 (1983), pp. 453, 477-478.
Geis et al., "Zone-Melting Recrystallization of Encapsulated Silicon Films on SiO.sub.2 Morphology and Crystallography", Applied Physics Letters, vol. 40, No. 2, 1982, pp. 158-160.
Stultz et al., "Arc Lamp Zone Melting And Recrystallization of Si Films on Oxidized Silicon Substrates", Applied Physics Letters, vol. 41, No. 9, 1982, pp. 824-826.

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