Method for fabricating quasi-monolithic integrated circuits

Details Method for fabricating quasi-monolithic integrated circuits Method for fabricating quasi-monolithic integrated circuits

1987-04-20

1989-10-24

Dees, Jose G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430316, 430318, 437 51, 437177, 437184, 437192, 437195, 437919, 357 41, 357 51, G03C 500

Patent

active

048761761

ABSTRACT:
Method for fabrication of quasi-monolithic microwave integrated circuits in which metals, oxides, and processes are selected to enable fabrication of the circuits by first producing many layers of metals and oxides in situ without removing the circuit from its environmental chamber. This reduces inclusion of contaminating chemical films and particles between the desired layers. Circuit elements are then defined by processing of the layers by photolithography and other processes from the top of the circuit downward. Lumped and distributed capacitors, resistors, inductors, transmission lines, and contacts for active devices are monolithically defined, with a reduced number of process steps.

REFERENCES:
patent: 4789645 (1988-12-01), Calviello et al.
Calviello et al., "First Successful Fabrication of High Performance All Refractive-Metal (TaAu) FET . . . ," Electronic Letters, vol. 22(10), May 1986, pp. 510-512.
Calviello et al., "Quasi-Monolithic . . . ," Microwave Journal, May 1986, pp. 243-254.

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