Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2011-05-10
2011-05-10
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S647000, C438S680000, C257S382000, C257S412000
Reexamination Certificate
active
07939434
ABSTRACT:
A method of directly depositing a polysilicon film at a low temperature is disclosed. The method comprises providing a substrate and performing a sequential deposition process. The sequential deposition process comprises first and second deposition steps. In the first deposition step, a first bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a first polysilicon sub-layer on the substrate. In the second deposition step, a second bias voltage is applied to the substrate, and plasma chemical vapor deposition is utilized to form a second polysilicon sub-layer on the first sub-layer. The first and second sub-layers constitute the polysilicon film, and the first bias voltage differs from the second bias voltage.
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Huang Jung-Jie
Peng I Hsuan
Tsai Cheng-Ju
Tseng Chih-Yuan
Yeh Yung-Hui
Industrial Technology Research Institute
Toledo Fernando L
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