Method for fabricating polysilicon conducting wires

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438657, 438757, H01L 21306, H01L 21311

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active

058720553

ABSTRACT:
A manufacturing method of fabricating a polysilicon conductive wire suitable for an integrated circuit and which can avoid pattern transfer errors caused by reflection of ultraviolet light during photolithographic processing and that results in constriction in width or the bottlenecking effect in part of the conductive wore. A polysilicon layer is formed above a semiconductor substrate having a preformed device. A cap insulting layer is formed above the polysilicon layer. A micro-roughness structure is formed on the surface of the cap insulating layer. A photoresist layer is coated over the micro-roughened surface of the cap insulating layer. A pattern is transferred onto the photoresist layer by selective light exposure followed by the removal of unexposed photoresist. Then the cap insulating layer and the polysilicon layer are etched in sequence in regions not covered by photoresist. The residual photoresist is then removed to leave behind a polysilicon conductive wire.

REFERENCES:
patent: 4933304 (1990-06-01), Chen et al.
patent: 4971655 (1990-11-01), Stefano et al.
patent: 5166093 (1992-11-01), Grief
patent: 5604157 (1997-02-01), Dai et al.

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