Method for fabricating polycrystalline silicon liquid...

Details Method for fabricating polycrystalline silicon liquid... Method for fabricating polycrystalline silicon liquid...

2007-01-23

2007-01-23

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S164000, C438S166000

Reexamination Certificate

active

10867814

ABSTRACT:
A method of fabricating integral-type LCD devices incorporating polysilicon-type TFTs reduces the number of masks required to fabricate a thin film transistor (TFT). According to the method, a lightly-doped-drain (LDD) type TFT is formed using a single photoresist pattern and a photoresist ashing technique.

REFERENCES:
patent: 2002/0105033 (2002-08-01), Zhang
patent: 2004/0126914 (2004-07-01), Chang et al.
patent: 4-360581 (1992-12-01), None
patent: 2000-0014192 (2000-03-01), None

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