Method for fabricating pixel structure of active matrix...

Details Method for fabricating pixel structure of active matrix... Method for fabricating pixel structure of active matrix...

2008-10-20

2009-08-18

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S048000, C438S030000, C257S072000

Reexamination Certificate

active

07575966

ABSTRACT:
A method for fabricating an AMOLED pixel includes forming a transparent semiconductor layer on a substrate and forming a first channel layer of the switch TFT, a lower electrode of a storage capacitor and a second channel layer of a driving TFT. A first dielectric layer is formed over the substrate. A first opaque metal gate of the switch TFT, a second opaque metal gate of the driving TFT and a scan line are formed on the first dielectric layer. A first source and a first drain of the switch TFT are formed in the first channel layer and a second source and a second drain of the switch TFT are formed in the second channel layer. A patterned transparent metal layer is formed on the first dielectric layer. A data line is formed over the substrate. An OLED is formed over the substrate.

REFERENCES:
patent: 6162654 (2000-12-01), Kawabe
patent: 7202096 (2007-04-01), Chen

Affiliated with

Also associated with

Rating

Method for fabricating pixel structure of active matrix... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating pixel structure of active matrix..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating pixel structure of active matrix... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4115975