Method for fabricating pixel structure

Details Method for fabricating pixel structure Method for fabricating pixel structure

2011-03-01

2011-03-01

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21001

Reexamination Certificate

active

07897442

ABSTRACT:
A method for fabricating a pixel structure is disclosed. A substrate is provided. A first conductive layer is formed on the substrate, and a first shadow mask exposing a portion of the first conductive layer is disposed over the first conductive layer. Laser is used to irradiate the first conductive layer for removing the part of the first conductive layer and forming a gate. A gate dielectric layer is formed on the substrate to cover the gate. A channel layer is formed on the gate dielectric layer over the gate. A source and a drain are formed on the channel layer and respectively above both sides of the gate. A patterned passivation layer is formed to cover the channel layer and expose the drain. An electrode material layer is formed to cover the patterned passivation layer and the exposed drain.

REFERENCES:
patent: 2004/0129943 (2004-07-01), Yoo et al.
patent: 2006/0099747 (2006-05-01), Park
patent: 2006/0119779 (2006-06-01), Chang et al.
patent: 1728363 (2006-02-01), None
patent: 101013655 (2007-08-01), None
patent: 2000181077 (2000-06-01), None

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