Method for fabricating photodiode of CMOS image sensor

Details Method for fabricating photodiode of CMOS image sensor Method for fabricating photodiode of CMOS image sensor

2008-04-08

2008-04-08

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C257SE21135

Reexamination Certificate

active

11176721

ABSTRACT:
A method for fabricating a photodiode of a CMOS image sensor is disclosed, to improve a charge accumulation capacity in the photodiode, which includes the steps of defining a semiconductor substrate as an active area and a field area by forming an STI layer; firstly implanting impurity ions for formation of the photodiode to the semiconductor substrate of the active area; secondarily implanting impurity ions for formation of the photodiode to the semiconductor substrate being adjacent to the STI layer; and forming a photodiode ion-implantation diffusion layer by diffusing the implanted impurity ions with a thermal process.

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