Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Reexamination Certificate
2008-04-08
2008-04-08
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
C257SE21135
Reexamination Certificate
active
07354841
ABSTRACT:
A method for fabricating a photodiode of a CMOS image sensor is disclosed, to improve a charge accumulation capacity in the photodiode, which includes the steps of defining a semiconductor substrate as an active area and a field area by forming an STI layer; firstly implanting impurity ions for formation of the photodiode to the semiconductor substrate of the active area; secondarily implanting impurity ions for formation of the photodiode to the semiconductor substrate being adjacent to the STI layer; and forming a photodiode ion-implantation diffusion layer by diffusing the implanted impurity ions with a thermal process.
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Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Lebentritt Michael
Ullah Elias
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