Method for fabricating patterns using a photomask

Details Method for fabricating patterns using a photomask Method for fabricating patterns using a photomask

2011-08-23

2011-08-23

Huff, Mark F (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S005000

Reexamination Certificate

active

08003302

ABSTRACT:
Disclosed herein is a method for fabricating a pattern using a photomask that includes forming a first light shielding layer pattern over a substrate; forming a first resist layer pattern aligned to the first light shielding layer pattern over the first light shielding layer pattern; forming a phase shift region by selectively etching a portion of the substrate exposed by the first light shielding layer pattern; forming a second resist layer pattern by reducing the line width of the first resist layer pattern; forming a second light shielding layer pattern, having a reduced line width, by etching an exposed portion of the first light shielding layer pattern, and exposing a portion of the substrate adjacent the groove to form a rim region; removing the second resist layer pattern to form a photomask; and transferring a second pattern onto a wafer by performing an exposure process using the photomask.

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