Method for fabricating passivation layer

Details Method for fabricating passivation layer Method for fabricating passivation layer

2007-01-23

2007-01-23

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S787000, C438S788000, C438S789000, C438S790000

Reexamination Certificate

active

10707112

ABSTRACT:
A method of fabricating a passivation layer is provided. A substrate with a plurality of device structures and at least an interconnect thereon is provided. A patterned metallic layer is formed over the interconnection layer. A plasma-enhanced chemical vapor deposition process is performed to form a first passivation over the metallic layer such that the processing pressure is higher (and/or the processing power is lower) than the pressure (the power) used in prior art. A moisture impermeable second passivation is formed over the first passivation layer. With the first passivation formed in a higher processing pressure (and/or lower processing power), damages to metallic layers or devices due to plasma bombardment is minimized.

REFERENCES:
patent: 5795833 (1998-08-01), Yu et al.
patent: 6291331 (2001-09-01), Wang et al.
patent: 6426016 (2002-07-01), Yang et al.
patent: 6523494 (2003-02-01), Perng et al.
Wolf et al. , Silicon Processing for the VLSI Era, vol. I, Lattice Press, 1986, pp. 166-174, 182-195.

Affiliated with

Also associated with

Rating

Method for fabricating passivation layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating passivation layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating passivation layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3725169