Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Patent
1997-09-05
1999-10-19
Bowers, Charles
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
438939, 438623, 438622, 438779, 438780, 438761, 438781, H01L 21265
Patent
active
059703814
ABSTRACT:
A method is provided that produces a good, strong organic monomolecular film having its atoms arranged in a three-dimensionally ordered manner by cleaving a III-V group compound semiconductor substrate in film formation molecules or in a solution containing them, in order to cause selective chemisorption which forms a monomolecular film and then deposits another layer of organic molecule film. In this method, the III-V group compound semiconductor substrate is cleaved in a solution containing SH groups dissolved into a solvent in order to form a self-assembled monolayer and is then placed in another solution, where metallic ions are adsorbed to the surface of the film or where the functional groups are converted by chemical treatment. The substrate is then immersed in a solution containing organic molecules that are selectively chemisorbed to the functional groups. This process is sequentially repeated to form good, strong multilayers having a three-dimensionally ordered arrangement while also controlling film thickness.
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Nagahara Larry A.
Ohno Hirotaka
Tokumoto Hiroshi
Bowers Charles
National Institute for Advanced Interdisciplinary Research
Nguyen Thanh
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