Method for fabricating optical information storage medium

Details Method for fabricating optical information storage medium Method for fabricating optical information storage medium

1994-02-22

1996-04-09

King, Roy V.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419227, 20419215, 20419212, 4302711, 4302731, 43027012, C23C 1434

Patent

active

055058353

ABSTRACT:
In forming steps of a recording layer or a dielectric layer of a phase change type optical disk by sputtering, a discharge gas which includes at least one of Kr gas and Xe gas is used. Alternatively, at least one of Ar gas and N.sub.2 gas may be further added to the discharge gas. Forming the recording layer or the dielectric layer of the phase change type optical disk in these discharge gases enables preventing of the introduction of the discharge gas into each layer during the forming steps. As a result, the void generation and growth in the recording layer is suppressed. Consequently, the deterioration of the cycle life characteristics due to repeated overwrite operations can be restrained. Therefore, high reliability and long life of the phase change type optical disk is attained.

REFERENCES:
patent: 5068022 (1991-11-01), Carcia
patent: 5206114 (1993-04-01), Kobayashi
patent: 5233599 (1993-08-01), Ohno et al.
M. Horie et al., "Analysis of Degradation Phenomena in Million Cycle Overwriting Process", Proceedings of the 3rd Symposium on Phase Transition, 1991 Autumn, pp. 7-13.

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