Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Reexamination Certificate
2006-12-12
2006-12-12
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
C438S706000, C438S718000, C438S745000
Reexamination Certificate
active
07148149
ABSTRACT:
A method for fabricating a nitride semiconductor element according to the present invention comprises the steps of: forming a nitride semiconductor layer13on a base substrate11; forming, on part of the upper surface of the nitride semiconductor layer13, a conductive film14made of an electron emitting layer14band a dry etching mask layer14afrom bottom to top; performing dry etching on the nitride semiconductor layer13; and performing wet etching on the nitride semiconductor layer13by emitting electrons from the nitride semiconductor layer13through the conductive film14to the outside.
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Ohno Hiroshi
Tamura Satoshi
Ueda Tetsuzo
McDermott Will & Emery LLP
Norton Nadine G.
Umez-Eronini Lynette T.
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