Method for fabricating nanoscale thermoelectric device

Details Method for fabricating nanoscale thermoelectric device Method for fabricating nanoscale thermoelectric device

2011-06-14

2011-06-14

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S445000, C438S551000, C438S666000, C257SE21251, C257SE21463, C257SE21589, C257SE29001, C257SE51001, C977S700000, C977S762000, C977S781000, C977S833000, C977S888000

Reexamination Certificate

active

07960258

ABSTRACT:
The present invention discloses a method for fabricating a nanoscale thermoelectric device, which comprises steps: providing at least one template having a group of nanoscale pores; forming a substrate on the bottom of the template; injecting a molten semiconductor material into the nanoscale pores to form a group of semiconductor nanoscale wires; removing the substrate to obtain a semiconductor nanoscale wire array; and using metallic conductors to cascade at least two semiconductor nanoscale wire arrays to form a thermoelectric device having a higher thermoelectric conversion efficiency.

REFERENCES:
patent: 6231744 (2001-05-01), Ying et al.
patent: 6969679 (2005-11-01), Okamura et al.
patent: 7098393 (2006-08-01), Fleurial et al.
patent: 7189435 (2007-03-01), Tuominen et al.
patent: 7488671 (2009-02-01), Corderman et al.
patent: 7517466 (2009-04-01), Asakawa et al.
patent: 7686885 (2010-03-01), Ku et al.
patent: 7846819 (2010-12-01), Pribat et al.
patent: 2005/0060884 (2005-03-01), Okamura et al.
patent: 2005/0257821 (2005-11-01), Ramanathan et al.
patent: 2007/0261730 (2007-11-01), Seker et al.
patent: 2008/0241755 (2008-10-01), Franklin et al.
patent: 2009/0194424 (2009-08-01), Franklin et al.
patent: 2010/0319759 (2010-12-01), Fisher et al.
patent: I266401 (2006-03-01), None
patent: I262221 (2006-09-01), None
patent: I280649 (2006-12-01), None
J. R. Lim, J. F. Whitacre, J. P. Fleurial, C. K. Huang, M. A. Ryan, N. V. Myung, Adv. Mater. 2005, 17, 1488.

Affiliated with

Also associated with

Rating

Method for fabricating nanoscale thermoelectric device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating nanoscale thermoelectric device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating nanoscale thermoelectric device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2632192