Method for fabricating multilayer semiconductor device

Details Method for fabricating multilayer semiconductor device Method for fabricating multilayer semiconductor device

1994-12-27

1997-09-16

Breneman, R. Bruce

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438636, 438643, 438648, H01L 2144

Patent

active

056680538

ABSTRACT:
A method for fabricating a multilayer semiconductor device according to the invention includes the steps of providing a conductive layer on a substrate; forming a barrier layer on the first conductive layer; forming an insulation layer on the barrier layer; selectively etching the insulation layer using the barrier layer as a stopper to form a through-hole; and selectively removing the barrier layer at the bottom of the through-hole from the conductive layer.

REFERENCES:
patent: 4410622 (1983-10-01), Dalal et al.
patent: 5449639 (1995-09-01), Wei et al.
patent: 5451543 (1995-09-01), Woo et al.
Wolf, S.; Silicon Processing for the VLSI Era; Lattice Press; p. 441 1986.

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