Method for fabricating MOSFET having cobalt silicide film

Details Method for fabricating MOSFET having cobalt silicide film Method for fabricating MOSFET having cobalt silicide film

1997-12-16

1999-05-18

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438685, 438607, 438653, 438655, H01L21/44

Patent

active

059045647

ABSTRACT:
Disclosed herein is a method for fabricating a metal oxide semiconductor field effect transistor having cobalt silicide. According to the method, there is first provided a semiconductor substrate having exposed silicon portions on the surface thereof. The exposed silicon is either single crystalline silicon or polycrystalline silicon, and may include junction regions in which N typed or P typed impurity such as arsenic, phosphorous, or boron is formed. Niobium and cobalt are sequentially deposited on the exposed silicon portions by electron-beam evaporation method. Afterwards, annealing step is performed to form a cobalt silicide film on the exposed silicon portions.

REFERENCES:
patent: 4378628 (1983-04-01), Levenstein et al.
patent: 5047367 (1991-09-01), Wei et al.
patent: 5510295 (1996-04-01), Cabral, Jr. et al.
patent: 5780361 (1998-07-01), Inoue
patent: 5780362 (1998-07-01), Wang et al.

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