Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate
Reexamination Certificate
2005-10-25
2010-11-16
Vinh, Lan (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
Etching inorganic substrate
C216S058000, C216S075000, C216S099000, C438S719000
Reexamination Certificate
active
07833430
ABSTRACT:
A method of making a microstructure with thin wall portions (T1-T3) includes a step of performing a first etching process to a material substrate having a laminate structure including a first conductive layer (11) and a second conductive layer (12) having a thickness of the thin wall portions (T1-T3), where the etching is performed from the side of the first conductive layer (11) thereby forming in the second conductive layer (12) pre thin wall portions (T1′-T3′) which has a pair of side surfaces apart from each other in an in-plane direction of the second conductive layer (12) and contact the first conductive layer (11). The method also includes a step of performing a second etching process from the side of the first conductive layer (11) for removing part of the first conductive layer (11) contacting the pre thin wall portions (T1′-T3′) to form the thin wall portions.
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Iwaki Masafumi
Kouma Norinao
Mi Xiaoyu
Okuda Hisao
Sawaki Ippei
Fujitsu Limited
Fujitsu Patent Center
Vinh Lan
LandOfFree
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