Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2007-01-29
2009-10-06
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C257S415000, C257SE29324
Reexamination Certificate
active
07598109
ABSTRACT:
Thin films, which are deposited on a sacrificial film on a substrate, are released and bonded back on a substrate surface. This technology provides open and closed 2D confined micro-
ano-channels and channel networks on a substrate surface. The geometry, size and complexity of the channels and channel networks can be modified by the film and substrate properties as well as the treatment techniques of the sacrificial layer etching. A method to fabricate such structures with position- and pattern-controllability is provided.
REFERENCES:
patent: 2003/0157783 (2003-08-01), Fonash et al.
Schmidt et al., “Three-Dimensional Nano-objects Evolving from a Two-Dimensional Layer Technology”, Advanced Materials, Wiley VCH, Weinheim, DE, vol. 13, No. 10, May 17, 2001, pp. 756-759.
Cavallo Francesca
Mei Yongfeng
Schmidt Oliver G.
Thurmer Dominic
Ligai Maria
Max-Plank-Gesellschaft zur Forderung der Wissenschaften E.V.
Pham Thanh V
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