Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Patent
1996-03-18
1998-08-04
Niebling, John
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
H01L 2100
Patent
active
057892717
ABSTRACT:
A method for forming an interconnect for making a temporary or permanent electrical connection to a semiconductor dice is provided. The interconnect includes a rigid substrate on which an insulating layer and a pattern of conductors are formed. A compliant layer is formed on the insulating layer of a material such as polyimide. Vias are formed in the compliant layer with metal contacts in electrical communication with the conductors. Microbumps are formed on the compliant layer in electrical communication with the contacts and are adapted to flex with the compliant layer. The interconnect can be used to provide a temporary electrical connection for testing bare semiconductor dice. Alternately the interconnect can be used for flip chip mounting dice for fabricating multi chip modules and other electronic devices.
REFERENCES:
patent: 3461357 (1969-08-01), Mutter et al.
patent: 4005472 (1977-01-01), Harris et al.
patent: 4661375 (1987-04-01), Thomas
patent: 4764804 (1988-08-01), Sahara et al.
patent: 5072289 (1991-12-01), Sugimoto et al.
patent: 5090118 (1992-02-01), Kwon et al.
patent: 5123850 (1992-06-01), Elder et al.
patent: 5225037 (1993-07-01), Elder et al.
patent: 5262718 (1993-11-01), Svendsen et al.
patent: 5289631 (1994-03-01), Koopman et al.
patent: 5302891 (1994-04-01), Wood et al.
patent: 5329423 (1994-07-01), Scholz
patent: 5367253 (1994-11-01), Wood et al.
patent: 5408190 (1995-04-01), Wood et al.
patent: 5426072 (1995-06-01), Finnila
patent: 5438223 (1995-08-01), Higashi et al.
patent: 5440240 (1995-08-01), Wood et al.
patent: 5487999 (1996-01-01), Farnworth
patent: 5492235 (1996-02-01), Crafts et al.
patent: 5534465 (1996-07-01), Frye et al.
patent: 5602422 (1997-02-01), Schuellet et al.
patent: 5661336 (1997-08-01), Phelps, Jr. et al.
patent: 5678301 (1997-10-01), Gochnour et al.
Kuhn et al, "High density, Low-Temperature Solder Reflow Bonding of Silicon Chips to Plastic Substrates", IBM Tech. Disc. Bull., vol. 18, No. 10, p. 3477, Mar. 1976.
"Solder Bump Formation on Via Holes", IBM Tech. Disc. Bull., vol. 37, No. 06B, p. 299, Jun. 1994.
Yamamoto, Yashuhikio et al., "Evaluation of New Micro-Connection System Using Microbumps", Nitto Denko Corp., Technical Paper, ISHM '93 Proceedings, pp. 370-378, 1993.
Miyake, Koyoshi et al., "Connectivity Analysis of New `Known Good Die` Connection System Using Microbumps", Technical Report, Nitto Denko Corp., pp. 1-7, 1994.
"Science Over Art. Our New IC Membrane Test Probe." Packard Hughes Interconnect Advertising Brochure, 1993.
Bilodeau Thomas G.
Gratton Stephen A.
Micro)n Technology, Inc.
Niebling John
LandOfFree
Method for fabricating microbump interconnect for bare semicondu does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating microbump interconnect for bare semicondu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating microbump interconnect for bare semicondu will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1176391