Method for fabricating metallic interconnects on electronic...

Details Method for fabricating metallic interconnects on electronic... Method for fabricating metallic interconnects on electronic...

2007-02-06

2007-02-06

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S598000, C438S637000, C438S641000, C438S668000, C438S675000, C438S687000

Reexamination Certificate

active

11046663

ABSTRACT:
The invention, which relates to a method for fabricating metallic interconnects with copper-nickel-gold layer construction on electronic components, is based on the object of specifying a method by means of which it is possible to fabricate such metallic interconnects on different electronic components cost-effectively by means of the known and tried and tested methods which have a comprehensive corrosion protection. According to the invention, the object is achieved by virtue of the fact that the interconnects are embodied such that they are completely encapsulated by being deposited in a manner buried in a patterned dielectric layer in the lower region and being covered in the upper region by a nickel-gold layer adjoining the lower encapsulation without any gaps.

REFERENCES:
patent: 4861425 (1989-08-01), Greet et al.
patent: 6869879 (2005-03-01), Ryan
patent: 2003/0092274 (2003-05-01), Brintzinger
patent: 2003/0183530 (2003-10-01), Chou et al.
patent: 2005/0007217 (2005-01-01), Deligianni et al.
patent: 2006/0118425 (2006-06-01), Basol et al.
patent: 101 56 054 (2003-11-01), None

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