Method for fabricating metal wire of semiconductor device

Details Method for fabricating metal wire of semiconductor device Method for fabricating metal wire of semiconductor device

1997-06-02

1999-01-05

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438685, H01L 2144

Patent

active

058562389

ABSTRACT:
A method for fabricating a metal wire of semiconductor devices is provided and comprises the steps of: depositing a barrier metal layer on an insulating film and subjecting the barrier metal layer to SF.sub.6 plasma treatment; forming an aluminum metal layer, a reflection-preventive layer and a photoresist film pattern on the surface of the barrier metal layer, in order; etching the reflection-preventive layer, the aluminum metal layer and the barrier metal layer to form a metal wire, with the photoresist film pattern serving as an etch mask; and removing the photoresist film pattern. The SF.sub.6 plasma treatment leaves no residue on the insulating film 2 during etching, as silicon nodule grows a little on the barrier metal layer when the aluminum metal layer is deposited thereon.

REFERENCES:
patent: 5430328 (1995-07-01), Hsue
patent: 5506177 (1996-04-01), Kishimoto et al.
patent: 5534463 (1996-07-01), Lee et al.
patent: 5554254 (1996-09-01), Huang et al.
patent: 5554563 (1996-09-01), Chu et al.

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