Method for fabricating metal silicide

Details Method for fabricating metal silicide Method for fabricating metal silicide

2011-05-17

2011-05-17

Pert, Evan (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21211

Reexamination Certificate

active

07943512

ABSTRACT:
A method for fabricating a metal silicide film is described. After providing a silicon material layer, a metal alloy layer is formed to cover the silicon material layer. A thermal process is performed to form a metal alloy silicide layer in a self-aligned way. A wet etching process is performed by using a cleaning solution including sulfuric acid and hydrogen peroxide to remove the residual metals and unreacted metal alloy.

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