Method for fabricating metal oxide semiconductor with...

Details Method for fabricating metal oxide semiconductor with... Method for fabricating metal oxide semiconductor with...

2007-12-18

2007-12-18

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S154000, C438S163000

Reexamination Certificate

active

11256855

ABSTRACT:
A method for fabricating metal oxide semiconductor with lightly doped drain. In the method, the gate electrode, the LDD of the n-type MOS TFT, and the source/drain electrode of the p-type MOS TFT are defined simultaneously in one photolithography step. The contact holes and the source/drain electrode of the n-type MOS TFT are also defined simultaneously in one photolithography step. The invention employs only six photolithography steps to manufacture the metal oxide semiconductor, such as TFT, with lightly doped drain, thereby avoiding alignment errors, further improving yield and increasing throughput.

REFERENCES:
patent: 2004/0229416 (2004-11-01), Shih
patent: 2006/0076618 (2006-04-01), Kang

Affiliated with

Also associated with

Rating

Method for fabricating metal oxide semiconductor with... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating metal oxide semiconductor with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating metal oxide semiconductor with... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3838117