Method for fabricating metal-oxide semiconductor transistor

Details Method for fabricating metal-oxide semiconductor transistor Method for fabricating metal-oxide semiconductor transistor

1999-05-17

2000-11-21

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

697745, H01L 21311, H01L 21302

Patent

active

061502766

ABSTRACT:
A method for fabricating a metal-oxide semiconductor (MOS) transistor on a semiconductor substrate is described. The invention introduces an air chamber with a low dielectric constant between the gate and the source/drain region so as to lower the fringing electric field between the gate and the source/drain region. Moreover, the dielectric constant of the dielectric layer between the gate and the source/drain region is reduced. Therefore, the gate-to-drain capacitance is decreased in the MOS transistor.

REFERENCES:
patent: 5015599 (1991-05-01), Verhaar
patent: 5093275 (1992-03-01), Tasch, Jr.et al.

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