Method for fabricating low temperature poly-silicon thin...

Details Method for fabricating low temperature poly-silicon thin... Method for fabricating low temperature poly-silicon thin...

2011-07-26

2011-07-26

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S210000, C257SE21413

Reexamination Certificate

active

07985636

ABSTRACT:
An exemplary method for fabricating an LTPS-TFT substrate is as follows. In step S1, a p-Si pattern including a source electrode contact region and a drain electrode contact region of a first type TFT, a source electrode contact region and a drain electrode contact region of a second type TFT is formed. In step S2, the source electrode contact region and the drain electrode contact region of the first type TFT are heavily doped with a first dopant. In step S3, gate electrodes of the first and the second type TFT are formed. In step S4, the source electrode contact regions and drain electrode contact regions of the first and second type TFTs are heavily doped with a second dopant. The first dopant and the second dopant are compensative, and the number ratio of the first dopant to the second dopant is approximately 2 to 1.

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