Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1993-12-01
1995-04-11
Fears, Terrell W.
Static information storage and retrieval
Systems using particular element
Semiconductive
365149, 257309, G11C 1300
Patent
active
054065151
ABSTRACT:
Low leakage trenches for Dynamic Random Access Memory (DRAM) cells and the devices formed thereby are disclosed. In one embodiment of the present invention, [the method includes forming] a diffusion ring is surrounding an upper portion of the trench. In another embodiment, a portion of the diffusion ring extends to the surface of a substrate. The diffusion ring can be formed by outdiffusing a dopant from a doped material deposited within the trench. In a further embodiment, the present [method] invention includes [forming] an insulating ring surrounding an upper portion of the trench. The insulating ring can be formed by thermal oxidation or by etching a sidewall shallow trench and depositing an insulating material therein. In another embodiment, a portion of the insulating ring extends to the surface of the substrate.
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Fears Terrell W.
International Business Machines - Corporation
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