Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-12-15
2000-07-04
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438233, 438618, 438230, 438303, H01L 214763
Patent
active
060838272
ABSTRACT:
A method for fabricating a local interconnect. A gate having a gate oxide layer, a gate polysilicon layer and a cap layer is formed on a provided substrate. A spacer is formed on the sidewall of the gate, and a source/drain region is formed in the substrate. A planarized dielectric layer is formed over the substrate to expose the cap layer. A portion of the dielectric layer and the spacer on one side of the gate is removed to form an opening, so that the source/drain region is exposed. The opening is transformed into a local-interconnect opening by removing the cap layer. A local interconnect is formed by forming a conductive layer in the local-interconnect opening.
REFERENCES:
patent: 5411909 (1995-05-01), Manning et al.
patent: 5466636 (1995-11-01), Cronin et al.
patent: 5773310 (1998-06-01), Park
patent: 5840609 (1998-11-01), Hyeon et al.
patent: 5897357 (1999-04-01), Wu et al.
patent: 6030876 (2000-02-01), Koike
Chen Coming
Lin Tony
Yeh Wen-Kuan
Bowers Charles
Nguyen Thanh
United Microelectronics Corp.
LandOfFree
Method for fabricating local interconnect does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating local interconnect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating local interconnect will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1485956