Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-05-29
2007-05-29
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000
Reexamination Certificate
active
10947335
ABSTRACT:
A method for fabricating a TFT array substrate for a liquid crystal display device is provided. The method includes: preparing a substrate; forming a gate line on the substrate using a first etchant; forming an insulation layer on the gate line; forming a semiconductor layer on a portion of the insulation layer; forming a test line on the insulation layer and source and drain electrodes on the semiconductor layer; forming a passivation layer having passivation hole to expose a portion of the gate line on the substrate; and forming a pixel electrode on the passivation layer by applying a second etchant including HNO3, a ferric compound, HClO4and flouro compound.
REFERENCES:
patent: 6590624 (2003-07-01), Lee
patent: 2003/0178650 (2003-09-01), Sonoda et al.
patent: 2006/0011920 (2006-01-01), Kim
LG.Philips LCD Co. , Ltd.
McKenna Long & Aldridge LLP
Pham Long
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