Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-10-24
2006-10-24
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S164000, C438S171000
Reexamination Certificate
active
07125756
ABSTRACT:
Disclosed is a method for fabricating a thin film transistor for a liquid crystal display device using four masks and without using a diffraction mask. The method of the present invention uses a first mask when forming a gate electrode, a second mask when forming an active pattern, a third mask when forming a plurality of contact holes at an upper portion of a channel layer, and a fourth mask when forming a pixel electrode and source and drain electrodes, so that the resulting liquid crystal display device may be completed by four masks without using a diffraction exposure method. Instead of using a diffraction mask, the present invention uses different etching rates between an insulating layer and an electrode layer, which is used for source and drain electrodes, in fabricating a thin film transistor.
REFERENCES:
patent: 6515300 (2003-02-01), den Boer et al.
patent: 2004/0036816 (2004-02-01), Yun
patent: 2005/0142714 (2005-06-01), Chae et al.
Hong Sung Jin
Lee Kyoung Mook
Oh Jae Young
Lee Hsien-Ming
LG.Philips LCD Co. , Ltd.
McKenna Long & Aldridge LLP
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