Method for fabricating laser generated I.C. masks

Details Method for fabricating laser generated I.C. masks Method for fabricating laser generated I.C. masks

1990-11-15

1992-04-14

Fisher, Richard V.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 21912168, 21912169, H01L 21268

Patent

active

051044811

ABSTRACT:
An improved method of making masks includes forming a layer of amorphous silicon of about 2,000 angstroms on a transparent substrate. A laser beam is directed through the transparent substrate traverses the amorphous silicon to form a pattern of crystallized silicon. The n-crystallized silicon is etched leaving a patterned substrate. The patterned substrate is used as a mask for exposing photoresist on semiconductor elements.

REFERENCES:
patent: 3889272 (1975-06-01), Lou et al.
patent: 3924093 (1975-12-01), Feldman et al.
patent: 4113486 (1978-09-01), Sato
patent: 4450041 (1984-05-01), Aklufi
patent: 4830978 (1989-05-01), Teng

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