Method for fabricating interconnection in an insulating...

Details Method for fabricating interconnection in an insulating... Method for fabricating interconnection in an insulating...

2007-08-07

2007-08-07

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21575

Reexamination Certificate

active

10906168

ABSTRACT:
A method for fabricating an interconnection in an insulating layer on a wafer is described. A wafer having a plurality of conductive lines thereon is provided. An insulating layer is formed over the conductive lines. Two via holes are formed in the insulating layer to expose two of the conductive lines waiting to be repaired. A first conductive layer is filled into the via holes to form two pattern marks. A mask is formed over the wafer to cover the insulating layer and the two pattern marks. The mask located above and between the two pattern marks is removed to form a trench exposing the two pattern marks and a portion of the insulating layer. A second conductive layer is formed over the mask to cover the two exposed pattern marks and the exposed insulating layer. The mask and the second conductive layer above the mask are removed simultaneously.

REFERENCES:
patent: 4900695 (1990-02-01), Takahashi et al.
patent: 5328553 (1994-07-01), Poon
patent: 2002/0070453 (2002-06-01), Yamamoto

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