Method for fabricating interconnect structures with reduced...

Details Method for fabricating interconnect structures with reduced... Method for fabricating interconnect structures with reduced...

2007-05-08

2007-05-08

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S586000, C438S637000, C438S638000, C438S631000, C438S672000, C257SE21575, C257SE21579, C257SE21587

Reexamination Certificate

active

10908931

ABSTRACT:
Methods to form interconnect structures utilizing sacrificial filling material layers are described herein. Utilizing the sacrificial filling material makes it possible to reduce damage to interlayer dielectric layers that result in enhanced device performance and/or increased reliability.

REFERENCES:
patent: 2004/0127001 (2004-07-01), Colburn et al.
patent: 2004/0175934 (2004-09-01), America et al.

Affiliated with

Also associated with

Rating

Method for fabricating interconnect structures with reduced... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating interconnect structures with reduced..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating interconnect structures with reduced... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3804168