Method for fabricating integrated circuits

Details Method for fabricating integrated circuits Method for fabricating integrated circuits

1992-06-22

1994-01-04

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 437225, 437228, H01L 2100, H01L 2102, B44C 122, C03C 1500

Patent

active

052756920

ABSTRACT:
The present invention features new etchants to be utilized in the etching, depositing and growth processes for fabricating integrated circuits. The etchants contain a new family of compounds consisting of a single molecule. The molecule contains several halogen atoms, thus eliminating the need to add chlorine compounds in admixture with fluorine etchant materials. The new materials provide selectivity in the etching and deposition processes, as well as high product yield with high throughput. The etchants of this invention consist of a single amine molecule containing both fluorine and another halogen atom, consisting of chlorine or bromine, which are attached covalently to a nitrogen base atom. The basic formula for the molecule of this invention is given by: ##STR1## where: Z=chlorine or bromine

REFERENCES:
patent: 3969487 (1976-07-01), Austin et al.
patent: 3975501 (1976-08-01), Gordon et al.
patent: 4741800 (1988-05-01), Yamazaki

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