Method for fabricating image display device

Details Method for fabricating image display device Method for fabricating image display device

2005-09-27

2005-09-27

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

C438S030000, C438S128000, C438S149000, C438S489000, C438S491000, C438S795000

Reexamination Certificate

active

06949452

ABSTRACT:
There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1provided on the periphery of the pixel region PAR of the active matrix substrate SUB1composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.

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