Method for fabricating III-V compound semiconductor

Details Method for fabricating III-V compound semiconductor Method for fabricating III-V compound semiconductor

2005-03-08

2005-03-08

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S048000, C438S483000

Reexamination Certificate

active

06864159

ABSTRACT:
A method for fabricating a III-V Group compound semiconductor comprising a step of epitaxially growing on an AlxGa1-xAs layer of lower Al content an AlxGa1-xAs layer of higher Al content, in which step a growth rate of the AlxGa1-xAs layer of higher Al content is made slower than a growth rate of the AlxGa1-xAs layer of lower Al content, thereby effectively inhibiting the occurrence of starting points of abnormal growth at the interface between the two layers.

REFERENCES:
patent: 4426701 (1984-01-01), Botez
patent: 5216684 (1993-06-01), Wang et al.
patent: 5477325 (1995-12-01), Miyashita et al.
patent: 5528615 (1996-06-01), Shima
patent: 5639674 (1997-06-01), Nozaki et al.
patent: 5956361 (1999-09-01), Ikeda et al.
patent: 6117699 (2000-09-01), Lemoff et al.
patent: 8-241896 (1996-09-01), None
Narui, “Metalorganic Vapor Deposition of A1GaAs on Ridged GaAs(100) Substrate For Low Threshold Current Laser” Journal of Crystal Growth 167(1996) 452-457.

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