Method for fabricating group III-V heterostructure devices havin

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 22, 437133, H01L 3118

Patent

active

051588960

ABSTRACT:
A lateral injection group III-V heterostructure device having self-aligned graded contact diffusion regions of opposite conductivity types and a method of fabricating such devices are disclosed. The device includes a heterojunction formed by a higher bandgap III-V compound semiconductor formed over a lower bandgap III-V compound semiconductor. The method of the present invention allows the opposite conductivity type diffusion regions to diffuse simultaneously and penetrate the heterojunction. This results in compositional mixing of the compound semiconductor materials forming the heterojunction in the diffusion regions.

REFERENCES:
patent: 4540446 (1985-09-01), Nonaka et al.
patent: 4546540 (1985-10-01), Ueyanagi et al.
patent: 4593307 (1986-06-01), Rupprecht et al.
patent: 4771325 (1988-09-01), Cheng et al.
patent: 4843033 (1989-06-01), Plumton et al.
patent: 4914499 (1990-04-01), Himoto
patent: 5027187 (1991-06-01), O'Mara, Jr. et al.
patent: 5032884 (1991-07-01), Yamagishi et al.
Tiwari, S., et al., "Rapid Thermal Diffusion and Ohmic Contacts Using Zinc in GaAs and GaAlAs", Appl. Phys. Lett., 51(25):2118 (1987) (Tiwari III).
Kiehl, R. A., et al., "p-Channel Quantum-Well Heterostructure MI.sup.3 SFET", IEEE Electron Device Letters, 9(6):309 (1988).
Subbarao, S. N. et al., "2-4 GHz Monolithic Lateral p-i-n Photodetector and MESFET Amplifier on GaAs-on-Si", IEEE Trans. on Microwave Theory and Techniques, 38(9):1199 (1990).
Tiwari, S., et al., "Ohmic Contacts to n-GaAs with Germanide Overlayers", IEDM Technical Digest, 1 (1983) (Tiwari I).
Tayrani, R., et al., "GaAs Surface Oriented Microwave PIN Diodes", IEEE, GaAs IC Symposium, 85 (1984).
Tiwari, S., et al., "Symmetric-Gain, Zero-Offset, Self-Aligned and Refractory-Contact Double HBT's", IEEE Electron Device Letters, EDL-8(9):417 (1987) (Tiwari II).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for fabricating group III-V heterostructure devices havin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating group III-V heterostructure devices havin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating group III-V heterostructure devices havin will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-905242

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.