Method for fabricating group III-V compound semiconductor...

Details Method for fabricating group III-V compound semiconductor... Method for fabricating group III-V compound semiconductor...

2005-08-23

2005-08-23

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Reexamination Certificate

active

06933213

ABSTRACT:
Provided is a compound semiconductor substrate fabrication method involving: preparing a base substrate; forming a first buffer layer on the prepared base substrate; forming a semiconductor layer on the first buffer layer; and removing the base substrate.

REFERENCES:
patent: 5290393 (1994-03-01), Nakamura
patent: 5847409 (1998-12-01), Nakayama
patent: 5905275 (1999-05-01), Nunoue et al.
patent: 5927995 (1999-07-01), Chen et al.
patent: 5985687 (1999-11-01), Bowers et al.
patent: A-3-161922 (1991-07-01), None
patent: 2000-105321 (2000-04-01), None

Affiliated with

Also associated with

Rating

Method for fabricating group III-V compound semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating group III-V compound semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating group III-V compound semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3497556