Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate
2004-11-02
2009-02-17
Nguyen, Dao H. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
C257S079000, C257S103000, C257SE21131, C257SE21566, C438S022000, C438S479000
Reexamination Certificate
active
07491984
ABSTRACT:
The present invention provides a Group III nitride compound semiconductor with suppressed generation of threading dislocations.A GaN layer31is subjected to etching, so as to form an island-like structure having a shape of, for example, dot, stripe, or grid, thereby providing a trench/mesa structure, and a mask4is formed at the bottom of the trench such that the upper surface of the mask4is positioned below the top surface of the GaN layer31. A GaN layer32is lateral-epitaxially grown with the top surface31aof the mesa and sidewalls31bof the trench serving as nuclei, to thereby bury the trench, and then epitaxial growth is effected in the vertical direction. In the upper region of the GaN layer32formed above the mask4through lateral epitaxial growth, propagation of threading dislocations contained in the GaN layer31can be prevented.
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Hiramatsu Toshio
Koike Masayoshi
Nagai Seiji
Tezen Yuta
McGinn IP Law Group PLLC
Nguyen Dao H.
Toyoda Gosei Co,., Ltd.
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