Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2005-02-15
2005-02-15
Hu, Shouxiang (Department: 2811)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S341000, C438S683000, C257S190000, C257S079000
Reexamination Certificate
active
06855620
ABSTRACT:
A GaN layer31is subjected to etching, so as to form an island-like structure having, for example, a dot, stripe, or grid shape, thereby providing a trench/mesa structure including mesas and trenches whose bottoms sink into the surface of a substrate base1.Subsequently, a GaN layer32is lateral-epitaxially grown with the top surfaces of the mesas and sidewalls of the trenches serving as nuclei, to thereby fill upper portions of the trenches (depressions of the substrate base1), and then epitaxial growth is effected in the vertical direction. In this case, propagation of threading dislocations contained in the GaN layer31can be prevented in the upper portion of the GaN layer32that is formed through lateral epitaxial growth. Thereafter, the remaining GaN layer31is removed through etching, together with the GaN layer32formed atop the GaN layer31,and subsequently, a GaN layer33is lateral-epitaxially grown with the top surfaces of mesas and sidewalls of trenches serving as nuclei, the mesas and trenches being formed of the remaining GaN layer32,thereby producing a GaN substrate30in which threading dislocations are considerably suppressed. When the area of a portion of the GaN layer31at which the GaN substrate30is in contact with the substrate base1is reduced, separation of the GaN substrate30from the substrate base1is readily attained.
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Ujiie et al., &#x
Koike Masayoshi
Nagai Seiji
Tezen Yuta
Hu Shouxiang
McGinn & Gibb PLLC
Toyoda Gosei Co,., Ltd.
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