Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-08-30
2005-08-30
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S211000, C438S184000, C438S230000, C438S595000, C438S257000, C438S645000, C438S706000
Reexamination Certificate
active
06936529
ABSTRACT:
The present invention relates to a method for fabricating a gate electrode of a semiconductor device with a double hard mask capable of preventing an abnormal oxidation of a metal layer included in the gate electrode and suppressing stress generation. The method includes the steps of: forming a gate insulation layer on a substrate; forming a gate layer structure containing at least a metal layer on the gate insulation layer; forming a hard mask oxide layer on the gate layer structure at a temperature lower than an oxidation temperature of the metal layer; forming a hard mask nitride layer on the hard mask oxide layer; patterning the hard mask oxide layer and the hard mask nitride layer as a double hard mask for forming the gate electrode; and forming the gate electrode by etching the gate layer structure with use of the double hard mask as an etch mask.
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Cho Heung-Jae
Hong Byung-Seop
Jang Se-Aug
Kim Yong-Soo
Lee Jung-Ho
Anya Igwe U.
Hynix / Semiconductor Inc.
Mayer Brown Rowe & Maw LLP
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