Method for fabricating GaInP/GaAs structures

Fishing – trapping – and vermin destroying

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156643, 437909, 148DIG11, H01L 2120, H01L 21306

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active

053309324

ABSTRACT:
In one form of the invention, a method is disclosed for removing portions of successive layers of GaAs 34 and GaInP 32 comprising the steps of: performing an anisotropic reactive ion etch on the GaAs layer; and performing an isotropic wet etch on the GaInP layer, whereby a mesa formed as a result of the reactive ion etch and the wet etch has substantially vertical sidewalls, and further whereby GaInP/GaAs structures having dimensions of less than approximately 3.0 .mu.m may be fabricated.

REFERENCES:
patent: 3972770 (1976-08-01), Stein
patent: 4596069 (1986-06-01), Bayraktaroglu
patent: 4996166 (1991-02-01), Ohshima
patent: 5077231 (1991-12-01), Plumton et al.
patent: 5155738 (1992-10-01), Ijichi et al.
patent: 5194403 (1993-03-01), Delage et al.

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