Batteries: thermoelectric and photoelectric – Photoelectric – Cells
Reexamination Certificate
2011-04-12
2011-04-12
Barton, Jeffrey T (Department: 1725)
Batteries: thermoelectric and photoelectric
Photoelectric
Cells
C438S458000, C438S085000, C438S099000, C438S455000, C438S104000, C257S043000
Reexamination Certificate
active
07923629
ABSTRACT:
Disclosed herein is a method for fabricating a flexible semiconductor electrode including preparing a first substrate having a semiconductor layer disposed on a release layer, forming a second substrate having an adhesive layer disposed on a conductive material-coated flexible substrate, and pressing the first substrate against the second substrate under heat effective to transfer the semiconductor layer from the first substrate to the second substrate. The method allows for a flexible semiconductor electrode to be fabricated at low temperatures in a stable manner, and the flexible semiconductor electrode allows for high photoelectric conversion efficiency in a solar cell.
REFERENCES:
patent: 6802926 (2004-10-01), Mizutani et al.
patent: 2003/0089899 (2003-05-01), Lieber et al.
patent: 2006/0107997 (2006-05-01), Matsui et al.
patent: 1020050000384 (2005-01-01), None
patent: WO9715959 (1997-01-01), None
Han, WQ, “Nanocrystal Cleaving” Applied Physics Letters, Apr. 5, 2004, vol. 84(14), 2644-2645.
Hur et al. “Extreme bendability of single walled carbon nanotube networks transferred from high temperarture growth substrates to plastic and their use in thin film transistors”, Appl. Physics Letters 86 243502-1 243502-4, Jun. 2005.
Moisala et al. “The role of metal nanoparticles in the catalytic production of single walled carbon nanotubes- a review”, J. Phys. Condens Matter 15 (2003) S3011-S3035.
Zhang “Growth of ZnO nanowires on modified well aligned carbon nanotube arrays”, Nanotechnology 17 (2006) 1036-1040.
Lee Eun Sung
Nam Jung Gyu
Park Sang Cheol
Park Young Jun
Barton Jeffrey T
Cantor & Colburn LLP
Pillay Devina
Samsung Electronics Co,. Ltd.
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